Spectromètre de masse à ions secondaires (SIMS) - PR1195891-2050-W

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1 pc. The objective is to procure a highly sensitive SIMS instrument for depth‑profiled chemical analysis of semiconductor materials and structures, offering high depth resolution and high mass resolving power. The system shall enable precise dopant and impurity profiling, as well as accurate determination of layer thickness and homogeneity, with a focus on characterizing advanced III‑V and diamond‑based device structures and epitaxial layers, including 150 mm substrates, to support process development, quality control and optimization at Fraunhofer IAF.

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